PART |
Description |
Maker |
IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|
HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 100PF50V_5%_NPO_,SM0603 CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
VG2618165CJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
MT4C4001JECJ-10/883C MT4C4001JECJ-10/IT MT4C4001JE |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
Austin Semiconductor http://
|
EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM 128Mb (2MBank6) Synchronous DRAM 128Mb的(200万Bank6)同步DRAM 128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
|
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
|
K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54 128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72 4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MT48LC4M32LFTG-8ITG MT48V4M32LFTG-8ITG MT48V4M32LF |
8M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
STMicroelectronics N.V.
|